Title :
Scattering mechanisms in graphene
Author :
Fuhrer, Michael S. ; Chen, Jian-Hao ; Jang, Chaun ; Cho, Sungjae ; Xiao, Shudong ; Ishigami, Masa ; Cullen, William G. ; Williams, Ellen D.
Author_Institution :
Dept. of Phsyics, Univ. of Maryland at Coll. Park, College Park, MD, USA
Abstract :
In this article, the author discuss the experiments performed on atomically-clean graphene on SiO2 in ultra-high vacuum to determine the charge carrier scattering rates from charged impurities, lattice defects, and phonons (graphene acoustic phonons and substrate polar optical phonons), as well as their dependence on dielectric environment. Addition of potassium to graphene as a model charged impurity is used to study the dependence of the mobility and minimum conductivity point on charged impurity density.
Keywords :
carrier mobility; electrical conductivity; graphene; impurities; phonons; potassium; C-K; SiO2; atomically-clean graphene; charge carrier scattering rates; charged impurity density; dielectric environment; graphene acoustic phonons; lattice defects; minimum conductivity point; model charged impurity; potassium; scattering mechanisms; substrate polar optical phonons; Educational institutions; Nanostructured materials; Nanotechnology; Physics; Scattering;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354947
