Scaling analysis of graphene nanoribbon tunnel-FETs

The scaling analysis reveals that the GNR T-FET´s performance is highly dependent on the length and width scaling. Because of the inverse proportion of band gap to width, the modulation of tunneling current by gate voltage improves as the GNR width decreases. Channel length scaling leads to significant increase of leakage current and subthreshold swing as well as reduction of IonIIoff, and transconductance. The major source of leakage current for short channel devices is attributed to direct source-to-drain tunneling of carriers. The I¿ff can be controlled by scaling the GNR Width. Gate oxide scaling improves the electrostatic control of gate over the channel and improves performance. Moreover the power supply voltage is limited by the GNR band gap, as a low band gap device with high supply voltage exhibits ambipolar behavior and higher I_OFF.