Title :
Chalcogenide semiconductor based sensor for fast NO2 detection
Author :
Tsiulyanu, D. ; Marian, S. ; Miron, V. ; Potje-Kamloth, K. ; Liess, H.-D.
Author_Institution :
Dept. of Phys., Tech. Univ., Kishinau, Moldova
Abstract :
For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO 2. Sensitivity of the device depends on gas concentration and is better at concentrations less than 3 ppm. The response time is considerably short being in the range of 2-3 min
Keywords :
chalcogenide glasses; electrical resistivity; gas sensors; nitrogen compounds; semiconductor thin films; tellurium compounds; 2 to 3 min; 20 C; NO2; chalcogenide semiconductor based sensor; fast NO2 detection; gas concentration; high sensitivity; nitrogen dioxide; resistance; response time; room temperature; sensitivity; tellurium alloys; thin films; Automobiles; Combustion; Delay; Electrical resistance measurement; Gas detectors; Nitrogen; Pollution measurement; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.889114
