• DocumentCode
    2693540
  • Title

    Chalcogenide semiconductor based sensor for fast NO2 detection

  • Author

    Tsiulyanu, D. ; Marian, S. ; Miron, V. ; Potje-Kamloth, K. ; Liess, H.-D.

  • Author_Institution
    Dept. of Phys., Tech. Univ., Kishinau, Moldova
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    377
  • Abstract
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO 2. Sensitivity of the device depends on gas concentration and is better at concentrations less than 3 ppm. The response time is considerably short being in the range of 2-3 min
  • Keywords
    chalcogenide glasses; electrical resistivity; gas sensors; nitrogen compounds; semiconductor thin films; tellurium compounds; 2 to 3 min; 20 C; NO2; chalcogenide semiconductor based sensor; fast NO2 detection; gas concentration; high sensitivity; nitrogen dioxide; resistance; response time; room temperature; sensitivity; tellurium alloys; thin films; Automobiles; Combustion; Delay; Electrical resistance measurement; Gas detectors; Nitrogen; Pollution measurement; Temperature distribution; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.889114
  • Filename
    889114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693540