• DocumentCode
    2693573
  • Title

    Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

  • Author

    Puls, Conor ; Staley, Neal ; Liu, Ying

  • Author_Institution
    Phys. Dept., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.
  • Keywords
    electron transport theory; graphene; 2D patterning; bandgap engineering; bilayer graphene; bulk graphite; charge concentration; electron transport; epitaxial graphene; graphene materials; graphene-based electronics; high electron mobility; planar tunnel junction fabrication; wafer-size films; Aluminum oxide; Doping; Electrons; Energy resolution; Fabrication; Oxidation; Photonic band gap; Spectroscopy; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354953
  • Filename
    5354953