DocumentCode
2693573
Title
Planar tunnel junction fabrication and bandgap engineering on bilayer graphene
Author
Puls, Conor ; Staley, Neal ; Liu, Ying
Author_Institution
Phys. Dept., Pennsylvania State Univ., University Park, PA, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
205
Lastpage
206
Abstract
High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.
Keywords
electron transport theory; graphene; 2D patterning; bandgap engineering; bilayer graphene; bulk graphite; charge concentration; electron transport; epitaxial graphene; graphene materials; graphene-based electronics; high electron mobility; planar tunnel junction fabrication; wafer-size films; Aluminum oxide; Doping; Electrons; Energy resolution; Fabrication; Oxidation; Photonic band gap; Spectroscopy; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354953
Filename
5354953
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