• DocumentCode
    2693583
  • Title

    High field transport properties of 2D and nanoribbon graphene FETs

  • Author

    Tahy, K. ; Koswatta, S. ; Tian Fang ; Qin Zhang ; Xing, Hao ; Jena, D.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    In the past we were able to drive back-gated 2D graphene transistors to saturation regime. Now we present the realization of these properties in double-gated graphene nanoribbon field effect transistors (GNR FETs). We were able to achieve Ion/Ioff ratio of 103 using either top or back-gates and we analyzed the high field characteristics of such devices.
  • Keywords
    field effect transistors; graphene; 2D nanoribbon graphene FET; back-gated 2D graphene transistors; back-gates; double-gated graphene nanoribbon; field effect transistors; high field characteristics; high field transport properties; top-gates; CMOS technology; Chromium; Conductivity; Double-gate FETs; Gold; Lithography; Photonic band gap; Switches; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA
  • Print_ISBN
    978-1-4244-3528-9
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354954
  • Filename
    5354954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693583