DocumentCode :
2693583
Title :
High field transport properties of 2D and nanoribbon graphene FETs
Author :
Tahy, K. ; Koswatta, S. ; Tian Fang ; Qin Zhang ; Xing, Hao ; Jena, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear :
2009
fDate :
22-24 June 2009
Firstpage :
207
Lastpage :
208
Abstract :
In the past we were able to drive back-gated 2D graphene transistors to saturation regime. Now we present the realization of these properties in double-gated graphene nanoribbon field effect transistors (GNR FETs). We were able to achieve Ion/Ioff ratio of 103 using either top or back-gates and we analyzed the high field characteristics of such devices.
Keywords :
field effect transistors; graphene; 2D nanoribbon graphene FET; back-gated 2D graphene transistors; back-gates; double-gated graphene nanoribbon; field effect transistors; high field characteristics; high field transport properties; top-gates; CMOS technology; Chromium; Conductivity; Double-gate FETs; Gold; Lithography; Photonic band gap; Switches; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Type :
conf
DOI :
10.1109/DRC.2009.5354954
Filename :
5354954
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2693583
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