• DocumentCode
    2693675
  • Title

    High speed devices

  • fYear
    2009
  • fDate
    22-24 June 2009
  • Firstpage
    147
  • Lastpage
    147
  • Keywords
    Aluminum gallium nitride; Atomic layer deposition; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; Indium phosphide; MODFETs; MOSFETs; Narrowband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2009. DRC 2009
  • Conference_Location
    University Park, PA, USA
  • Print_ISBN
    978-1-4244-3528-9
  • Electronic_ISBN
    978-1-4244-3527-2
  • Type

    conf

  • DOI
    10.1109/DRC.2009.5354960
  • Filename
    5354960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693675