Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs

Author

Chung, J.W. ; Lee, J. ; Piner, E.L. ; Palacios, T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

155

Lastpage

156

Abstract

The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; VLSI; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; AlGaN-GaN; CMOS technologies; HEMT; III-V compound semiconductors; MOSFET; Si; VLSI chips; compound semiconductor electronics; low-cost heterogeneous integration technology; mixed-signal performance; seamless on-wafer integration; Aluminum gallium nitride; CMOS technology; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; MOSFETs; Robustness; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354963

Filename

5354963