Title :
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE
Author :
Wong, Man Hoi ; Pei, Yi ; Brown, David F. ; Keller, Stacia ; Speck, James S. ; Mishra, Umesh K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
In summary, MBE-grown N-face HEMTs deliver outstanding large signal performance in the C-band, comparable to well-developed Ga-face devices. It was demonstrated that back-barrier engineering could effectively enhance device performance, and hence should be identified as an important design consideration when scaling N-face HEMTs for millimeter-wave operations.
Keywords :
gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; C-band; Ga-face devices; GaN; MBE-grown N-face HEMT; back-barrier engineering; high performance MBE-grown N-face microwave GaN HEMT; millimeter-wave operations; signal performance; Electron traps; Gallium nitride; HEMTs; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Plasma applications; Plasma devices; Plasma temperature; Polarization;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354964
