Title :
High performance monolithic InP HBT-HEMT integration
Author :
Ha, W. ; Urteaga, M. ; Griffith, Z. ; Pierson, R. ; Rowell, P. ; Chen, P. ; Brar, B.
Author_Institution :
Teledyne Sci. Co., Thousand Oaks, CA, USA
Abstract :
In this paper, we report the successful integration of high performance 0.5¿m heterojunction bipolar transistors (HBTs) and 35nm high electron mobility transistors (HEMT) on an indium phosphide (InP) substrate. Both transistors demonstrate power gain cutoff frequencies (fmax) in excess of 300GHz, a ~2x improvement over previously reported results from integrated InP devices. The device epitaxy is grown in a single growth with the HEMT beneath the HBT sub-collector. Optimization of the device epitaxy and the HEMT lithography processes allow for HEMT-to-HBT separation of <10¿m.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; semiconductor growth; InP; heterojunction bipolar transistors; high electron mobility transistors; high performance monolithic HBT-HEMT integration; Cutoff frequency; Epitaxial growth; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Lithography; Monolithic integrated circuits; Radio frequency; Substrates; Topology;
Conference_Titel :
Device Research Conference, 2009. DRC 2009
Conference_Location :
University Park, PA
Print_ISBN :
978-1-4244-3528-9
Electronic_ISBN :
978-1-4244-3527-2
DOI :
10.1109/DRC.2009.5354966
