Title :
Comparative Study of Phase Noise in HEMT and MESFET Microwave Oscillators
Author :
Pouysegur, M. ; Graffeuil, J. ; Sautereau, J.F. ; Fortea, J.P.
fDate :
May 9 1975-June 11 1987
Abstract :
Several identical X band cavity stabilized MESFET and HEMT oscillators are presented. Their phase noise and some other noise data are reported. Under exactly the same oscillating conditions, the MESFET oscillators exhibit the best phase noise performance not only because of their lower low frequency noise but also because of a better linearity which provides a smaller LF noise conversion in the microwave frequency range.
Keywords :
Circuit noise; Gallium arsenide; HEMTs; Low-frequency noise; MESFETs; Microwave devices; Microwave frequencies; Microwave oscillators; Phase noise; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132470
