• DocumentCode
    2693886
  • Title

    Comparative Study of Phase Noise in HEMT and MESFET Microwave Oscillators

  • Author

    Pouysegur, M. ; Graffeuil, J. ; Sautereau, J.F. ; Fortea, J.P.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    557
  • Lastpage
    560
  • Abstract
    Several identical X band cavity stabilized MESFET and HEMT oscillators are presented. Their phase noise and some other noise data are reported. Under exactly the same oscillating conditions, the MESFET oscillators exhibit the best phase noise performance not only because of their lower low frequency noise but also because of a better linearity which provides a smaller LF noise conversion in the microwave frequency range.
  • Keywords
    Circuit noise; Gallium arsenide; HEMTs; Low-frequency noise; MESFETs; Microwave devices; Microwave frequencies; Microwave oscillators; Phase noise; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132470
  • Filename
    1132470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693886