Long Term Stability of DROs Compared to Crystal Oscillators

Guidelines are presented for GaAs FET DRO´s which when followed result in the DRO´s long term drift characteristics being similar to crystal oscillators. The guidelines fall into three categories: electrical stresses in the FET, fabrication issues of the DRO, and processing of the FET (a screening test for the GaAs FETs is described). Experimental data is included on a sample of units that support the proposed guidelines.