Title :
A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application
Author :
Bishop, W.L. ; McKinney, K. ; Mattauch, R.J. ; Crowe, T.W. ; Green, G.
fDate :
May 9 1975-June 11 1987
Abstract :
A novel whiskerless Schottky diode has been developed in which shunt capacitance is minimized by means of an etched surface channel. This structure is easily fabricated and the DC I-V characteristics areas good as those of the best available whisker-contacted devices. Preliminary RF characterization in an unoptimized mount at 110 GHz has yielded room temperature SSB mixer noise temperature of 950 K and SSB conversion loss of 6.4 dB. The diode is robust and can be operated at cryogenic temperatures. Potential applications include waveguide and planar mixers, planar arrays, multipliers, varactor tuners, and microwave integrated circuits.
Keywords :
Amplitude modulation; Capacitance; Etching; Integrated circuit noise; Integrated circuit yield; Millimeter wave devices; Radio frequency; Schottky diodes; Submillimeter wave devices; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132483
