DocumentCode
26941
Title
Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D–SONOS Applications
Author
Fengying Qiao ; Arreghini, A. ; Blomme, P. ; Date, L. ; Van den bosch, G. ; Liyang Pan ; Jun Xu ; Van Houdt, J.
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
34
Issue
5
fYear
2013
fDate
May-13
Firstpage
620
Lastpage
622
Abstract
The reliability (endurance and retention) of tunnel oxide (grown and deposited oxide) of 3-D-SONOS devices is compared. Devices with grown tunnel oxide show better initial oxide quality, better fresh retention, and more robust endurance characteristics. Both devices show similar cycling degradation trend. The worse postcycling retention is due to tunnel oxide degradation leading to a fast initial loss of charge stored in generated tunnel oxide defects and a higher trap-assisted tunneling rate.
Keywords
dielectric devices; storage management chips; tunnelling; 3D-SONOS devices; ISSG oxide; high-temperature oxide; higher trap-assisted tunneling rate; in situ steam generation; postcycling retention; robust endurance characteristics; tunnel dielectric; tunnel oxide defects; tunnel oxide degradation; 3-D–SONOS; endurance; retention; tunnel oxide;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2254463
Filename
6504710
Link To Document