Title :
Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D–SONOS Applications
Author :
Fengying Qiao ; Arreghini, A. ; Blomme, P. ; Date, L. ; Van den bosch, G. ; Liyang Pan ; Jun Xu ; Van Houdt, J.
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The reliability (endurance and retention) of tunnel oxide (grown and deposited oxide) of 3-D-SONOS devices is compared. Devices with grown tunnel oxide show better initial oxide quality, better fresh retention, and more robust endurance characteristics. Both devices show similar cycling degradation trend. The worse postcycling retention is due to tunnel oxide degradation leading to a fast initial loss of charge stored in generated tunnel oxide defects and a higher trap-assisted tunneling rate.
Keywords :
dielectric devices; storage management chips; tunnelling; 3D-SONOS devices; ISSG oxide; high-temperature oxide; higher trap-assisted tunneling rate; in situ steam generation; postcycling retention; robust endurance characteristics; tunnel dielectric; tunnel oxide defects; tunnel oxide degradation; 3-D–SONOS; endurance; retention; tunnel oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2254463
