DocumentCode
2694649
Title
Modeling of New Microwave Devices
Author
Salmer, G.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
767
Lastpage
770
Abstract
The main recent evolutions of microwaves devices (MESFET, MODFET, HBT, MISFET, IMPATT diodes and TED) are presented. It appears that many new physical phenomena must be taken into account when we want to describe the behaviour of such devices and to simulate them. These effects occur not only in bulk materials but also in heterostructures. Three different types of models are presented: Monte Carlo simulation, two dimensional and one dimensional resolution of basic equations. Their respective advantages are precised.
Keywords
Diodes; Electrons; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Microwave devices; Millimeter wave devices; Neodymium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132526
Filename
1132526
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