DocumentCode
2694844
Title
Microwave Performance of an Optically Controlled AlGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET
Author
Simons, R.N. ; Bhasin, K.B.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
815
Lastpage
818
Abstract
Direct current and also characteristics of optically the microwave illuminated AIGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.8 dB under 1.7 mW/cm/sub 2/ optical intensity at 0.83 µm. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch-off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high-speed high-frequency photo detector, and mixer are demonstrated.
Keywords
Current measurement; Electron optics; Gain; Gallium arsenide; HEMTs; High speed optical techniques; MESFETs; MODFETs; Optical control; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132540
Filename
1132540
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