DocumentCode
2694905
Title
A High Performance, Quasi-Monolithic 2 to 18 GHz Distributed GaAs FET Amplifier
Author
Cappello, A. ; Alexander, T. ; Calviello, J. ; Ward, D. ; Bie, P. ; Pomian, R.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
833
Lastpage
836
Abstract
Design, fabrication, and performance of a quasi-monolithic distributed GaAs FET amplifier is discussed. A gain of 20 dB and noise figure of 5.8 dB over 2 to 18 GHz are achieved. The amplifier circuits, using modified commercially available GaAs FET chips, are ideal for moderate volume (less than 5000), high performance applications.
Keywords
Capacitance; Circuits; Cutoff frequency; Distributed amplifiers; FETs; Fabrication; Gallium arsenide; Noise figure; Resistors; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132545
Filename
1132545
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