DocumentCode
2695399
Title
FET´s and HEMT´s at Cryogenic Temperatures - Their Properties and Use in Low-Noise Amplifiers
Author
Pospieszalski, M.W. ; Weinreb, S.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
955
Lastpage
958
Abstract
This paper reviews the performance of a number of FET´s and HEMT´s at cryogenic temperatures. Typical d.c. characteristics and X-band noise parameters are presented and qualitatively correlated wherever possible with other technological or experimental data. While certain general trends can be identified, further work is needed to explain a number of observed phenomena. Design examples of three-stage, X-band HEMT and FET amplifiers are briefly discussed. Typical noise temperatures at 8.4 GHz areT/sub n/ = 22K, for all FET amplifiers and 11K for amplifier with HEMT´s in the input stage.
Keywords
Cooling; Cryogenics; FETs; Gallium arsenide; HEMTs; Low-noise amplifiers; Observatories; Radio astronomy; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132579
Filename
1132579
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