DocumentCode
2695500
Title
Millimeter Wave Heterojunction MITATT Diodes
Author
Dogan, N.S. ; East, J.R. ; Elta, M.E. ; Haddad, G.I.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
973
Lastpage
976
Abstract
This paper presents a design theory, fabrication procedure and experimental results for heterojunction millimeter wave transit time devices operating in the IMPATT, MITATT or TUNNETT mode. The results show that significant improvements in the efficiency can be achieved by heterojunction structures. The diodes were operated as oscillators between 65 and 93 GHz. A pulsed power output of 50mw and RF conversion efficiency of 2.4 percent was achieved at 72 GHz.
Keywords
Diodes; Fabrication; Gallium arsenide; Heterojunctions; Millimeter wave devices; Millimeter wave technology; Packaging; Radio frequency; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132584
Filename
1132584
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