Title :
Broadband HEMT Amplifier for 26.5 - 40.0 GHz
Author :
Shibata, K. ; Abe, B. ; Hori, S. ; Kamei, K.
fDate :
May 9 1975-June 11 1987
Abstract :
A broadband amplifier operating over 26.5 to 40 GHz has been developed by using 0.25-µm gate HEMTs. The amplifier has been fabricated by cascading five unit amplifiers. Two balanced-type unit amplifiers are used in an input and an output stages to realize good input/output VSWRs . Three single-ended unit amplifiers are installed in the intermediate stages to achieve higher gain. The developed amplifier shows a noise figure of <= 7.0 dB, a gain of 18.2 +- 1.6 dB and inputfoutput VSWRs of <= 2.0 over 26.5 to 40 GHz.
Keywords :
Broadband amplifiers; Equivalent circuits; Frequency measurement; Gain measurement; HEMTs; Loss measurement; Microstrip; Resistors; Semiconductor device measurement; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132595
