A novel etching-oxidation fabrication method for 3D nano structures on silicon and its application to SOI symmetric waveguide and 3D taper spot size converter

Author

Li, Ling-Han ; Higo, Akio ; Kubota, Masanori ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Tokyo Univ., Tokyo

fYear

2008

fDate

11-14 Aug. 2008

Firstpage

27

Lastpage

28

Abstract

A novel etching and oxidation method utilizing space effect of dry etching for three dimensional silicon structure is presented. Testing devices of SOI symmetric waveguide with ultra thick SiO₂ cladding and silicon waveguide structure integrated with 3D taper spot size converter are fabricated using this method.

Keywords

claddings; elemental semiconductors; etching; nanotechnology; optical waveguides; oxidation; silicon; silicon-on-insulator; 3D nanostructures; 3D taper spot size converter; SOI symmetric waveguide; Si; SiO₂; SiO₂ cladding; etching; oxidation; silicon waveguide; space effect; Dry etching; Lithography; Optical coupling; Optical device fabrication; Optical waveguides; Oxidation; Shape; Silicon; Space technology; Testing; Spot size converter; Sub micron etching and oxidation; Symmetric SOI waveguide; Ultra thick SiO2 layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on

Conference_Location

Freiburg

Print_ISBN

978-1-4244-1917-3

Electronic_ISBN

978-1-4244-1918-0

Type

conf

DOI

10.1109/OMEMS.2008.4607811

Filename

4607811