Long wavelength laser diodes based on GaAs diodes based on GaAs

Author

Chi, Jim ; Wang, J.S. ; Liu, Y.S.

Author_Institution

Nano-Photonics Res. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

7

Lastpage

10

Abstract

Recent data on two approaches for 1.3 μ laser operation on GaAs substrates, InAs QDs and InGaNAs QWs, are presented. Lasers fabricated with epitaxial films of MBE grown InAs/InGaAs quantum dots have shown to be capable of ultra low threshold current operation near 1 mA while reaching several mW power level. MOCVD grown InGaNAs quantum wells showed low threshold density of less than 400 A/cm².

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum dot lasers; quantum well lasers; semiconductor epitaxial layers; semiconductor quantum dots; semiconductor quantum wells; 1.3 μ laser operation; 1.3 mum; GaAs; GaAs diodes; GaAs substrates; InAs QDs; InAs-InGaAs; InAs/InGaAs quantum dots; InGaNAs QWs; InGaNAs-GaAs; MBE; MOCVD grown InGaNAs quantum wells; epitaxial films; laser fabrication; long wavelength laser diodes; low threshold density; ultra low threshold current operation; Diode lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Molecular beam epitaxial growth; Power lasers; Quantum dot lasers; Quantum well lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278152

Filename

1278152