Title :
Research on III-V compound semiconductor based optoelectronic devices
Author :
Luo, Y. ; Sun, C. ; Hao, Z. ; Han, Y. ; Xiong, B. ; Guo, W. ; Wu, T.
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
In this talk, we shall present research activities on compound semiconductor based optoelectronic devices in State Key Lab on Integrated Optoelectronics, Tsinghua University. The presentation will cover high-speed electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers for trunk line fiber communications, growth of InAsP/InGaAsP multiple-quantum-well (MQW) structures by all-solid-source molecular beam epitaxy (SSMBE) system, and the work on GaN based blue light emitting devices.
Keywords :
III-V semiconductors; arsenic compounds; distributed feedback lasers; electroabsorption; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; optical fibre communication; optical modulation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN based blue light emitting devices; III-V compound semiconductor based optoelectronic devices; InAsP-InGaAsP; InAsP/InGaAsP multiple-quantum-well structures; MQW; State Key Lab on Integrated Optoelectronics; Tsinghua University; all-solid-source molecular beam epitaxy system; high-speed electroabsorption modulator integrated distributed feedback lasers; trunk line fiber communications; Distributed feedback devices; Fiber lasers; III-V semiconductor materials; Integrated optoelectronics; Laser feedback; Optical fiber communication; Optical modulation; Optoelectronic devices; Quantum well devices; Semiconductor lasers;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278153
