MOCVD growth and properties of ZnO and Zn1-xMgxO films

In this work, the high-quality ZnO based films were epitaxially deposited by low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique. The characteristics of ZnO films were studied as a function of the growth conditions such as the growth temperatures, and the flow ratio of II/VI, which dramatically affect the structure and the associated optical properties of the epilayer. The spontaneous emission spectrum measured at the low temperature of 4 K shows an emission peak related to donor-bound exciton at the full width of 2 nm, indicating rather high-quality of the ZnO epilayer obtained by optimizing the above growth conditions. The Zn_1-xMg_xO alloy thin film has been grown with the incorporation of Mg at a maximum value of x=0.22. The structure and optical properties of Zn_1-xMg_xO alloy thin film has then been discussed briefly.