Title :
Formation and characteristics of wide band gap II-VI semiconductor quantum dots
Author :
Fan, X.W ; Shan, C.X. ; Yang, Z. ; Zhang, J.Y. ; Liu, Y.C. ; Lu, Y.M. ; Shen, D.Z.
Author_Institution :
Key Lab. of Excited State Process, Changchun Inst. of Opt., China
Abstract :
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time, the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration, the size of dots becomes larger and the density decreases, which is explained by virtue of the surface free energy.
Keywords :
II-VI semiconductors; MOCVD; atomic force microscopy; cadmium compounds; free energy; selenium compounds; semiconductor quantum dots; surface diffusion; surface energy; wide band gap semiconductors; zinc compounds; AFM; CdSe QDs; CdSe-GaAs; GaAs; Ostwald ripening process; Stranski-Krastanow mode; Volmer-Weber mode; ZnCdSe QDs; ZnCdSe quantum dots; ZnCdSe-GaAs; ZnSeS dots; atomic force microscopy; critical thickness; dot formation process; formation process; low-pressure metalorganic chemical vapor deposition; strain release; surface diffusion; surface free energy; wide band gap II-VI semiconductor quantum dots; Atom optics; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Optical devices; Quantum dots; Quantum mechanics; US Department of Transportation; Wideband; Zinc compounds;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278156
