Title :
Product NBTI Distribution and Voltage Dependence - impact of relaxation and droops
Author :
Haggag, Amr ; Liu, Ning ; Abramowitz, Peter ; Moosa, Mohamed ; Anderson, Gary ; Burnett, David ; Parihar, Sanjay ; Abeln, Glenn ; Higman, Jack
Author_Institution :
Freescale Semicond., Austin, TX, USA
Abstract :
The impact of relaxation and droops in determining the voltage dependence of NBTI during product stressing is discussed. This has implications on the Fmax and Vmin guardbands extrapolated from product stress to use conditions. Voltage dependence for the shift of the 3sigma tail bits in both new and old technology nodes are compared to illustrate the importance of relaxation and droops.
Keywords :
CMOS integrated circuits; SRAM chips; dielectric relaxation; stress relaxation; CMOS gate dielectric scaling; Fmax guard band; SRAM arrays; Vmin guard bands; droops; product NBTI distribution; product stressing; relaxation; voltage dependence; CMOS technology; Lifting equipment; Niobium compounds; Performance analysis; Probability distribution; Random access memory; Stress; Tail; Titanium compounds; Voltage; NBTI; distribution; product; relaxation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488662
