Title :
Key technologies for novel wavelength-selective photodetectors
Author :
Ren, Xiaomin ; Huang, Hui ; Zhang, Ruikang ; Wang, Xingyan ; Wang, Qi ; Huang, Yongqing ; Wu, Ronghan ; Gao, Junhua ; Ma, Xiaoyu ; Zhu, Ninghua
Author_Institution :
Opt. Commun. Center, Beijing Univ. of Posts & Telecommun., China
Abstract :
One-Mirror-Inclined Three-Mirror-Cavity (OMITMiC) photodetector, which combines a Fabry-Perot filtering-cavity with a taper absorption-cavity, features high-speed, high quantum efficiency and ultra-narrow spectral linewidth simultaneously and allows wide range tuning when proper tuning mechanism is introduced. First fabrication and demonstration of this kind of device on GaAs substrate had been done in our laboratory. A quantum efficiency of 75% and a spectral linewidth of 0.8 nm (FWHM) were achieved with an absorption layer as thin as 0.119 μm. Relevant micromechanical tunable Fabry-Perot filter with a tuning range about 30 nm had been achieved. Research works on the key technologies to transfer our success to InP based long wavelength device are also presented.
Keywords :
III-V semiconductors; indium compounds; light absorption; micromechanical devices; micromirrors; optical fabrication; optical filters; optical tuning; photodetectors; 0.119 mum; 75 percent; Fabry-Perot filtering-cavity; GaAs; GaAs substrate; InP; InP based long wavelength device; absorption layer; high quantum efficiency; micromechanical tunable Fabry-Perot filter; one-mirror-inclined three-mirror cavity photodetectors; taper absorption-cavity; ultranarrow spectral linewidth; wavelength-selective photodetectors; wide range tuning; Absorption; Epitaxial layers; Fabry-Perot; Gallium arsenide; Indium phosphide; Mirrors; Optical device fabrication; Optical fiber communication; Photodetectors; Wet etching;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278163
