HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS

Author

Wang, Miaomiao ; Kulkarni, Pranita ; Cheng, Kangguo ; Khakifirooz, Ali ; Basker, V.S. ; Jagannathan, Hemanth ; Yeh, Chun-Chen ; Paruchuri, Vamsi ; Doris, Bruce ; Bu, Huiming ; Lin, Chung-Hsun ; Stathis, James H. ; Maitra, Kingsuk ; Oldiges, Philip J.

Author_Institution

Albany Nanotech, IBM Res., Albany, NY, USA

fYear

2010

fDate

2-6 May 2010

Firstpage

1099

Lastpage

1104

Abstract

Hot-carrier degradation (HCI) in aggressively scaled undoped-body devices is carefully studied and compared for high-k/metal gate FINFETs and extremely thin silicon-on-insulator (ETSOI) transistors. We show that HCI involves different degradation mechanisms for silicon-on-insulator (SOI)-FINFETs and ETSOI devices though both are fabricated on undoped body. For FINFETs, the HC degradation correlated with interface trap generation in the channel region, whereas for ETSOI, trap generation and electron trapping in the spacer-nitride region were observed.

Keywords

MOSFET; high-k dielectric thin films; hot carriers; interface states; silicon-on-insulator; SOI FINFET; aggressive scaled undoped-body devices; electron trapping; high-k-metal gate FINFET; hot carrier degradation; interface trap generation; silicon-on-insulator transistor; spacer-nitride region; undoped-body ETSOI FET; Degradation; FETs; FinFETs; High K dielectric materials; High-K gate dielectrics; Hot carriers; Human computer interaction; Predictive models; Silicon on insulator technology; Stress; ETSOI; FINFET; fully-depleted; high-k/metal gate; hot carrier induced degradation; undoped body;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488664

Filename

5488664