Title :
NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and dispersive hole trapping model
Author :
Deora, S. ; Maheta, V.D. ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
IDLIN shift due to NBTI is measured using UF-OTF IDLIN method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress EOX and T is modeled from ultra-short to long stress time using non-dispersive H/H2 RD model governed NIT and dispersive Nh components. NIT and Nh model parameters show consistent EOX and T dependent behavior across all devices. Finally, extrapolated ttF values are obtained for different EOX from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.
Keywords :
MOSFET; hole traps; interface states; reaction-diffusion systems; silicon compounds; H-H2 reaction-diffusion; NBTI lifetime prediction; SiON; SiON p-MOSFETs; UF-OTF IDLIN method; dispersive hole trapping model; interface traps; measurement delay; negative bias temperature instability; nondispersive H-H2 RD model; power-law fit extrapolation method; ultrafast on-the-fly linear drain current method; Degradation; Dispersion; Hydrogen; MOSFET circuits; Niobium compounds; Predictive models; Presence network agents; Stress; Time measurement; Titanium compounds; NBTI; PNA; PNO; RTNO; Reaction-Diffusion (RD) model; SiON; hole trapping; interface traps;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488665
