Title :
High-brightness AlGalnP tunnel-regenerated multi-active-region LEDs
Author :
Shen, Guang-Di ; Guo, Xia ; Chen, Jian-Xi ; Wang, Guo-Hong ; Du, Jin-Yu ; De-Shu Zuo ; Wang, Xue-Zhong ; Gao, Guo ; Ji, Yuan ; Balk, Ludwig J. ; Heiderhoff, Ralph ; Lee, Teck Hock
Author_Institution :
Inst. of Electron. & Inf. Eng., Beijing Univ. of Technol., China
Abstract :
Scalability of TRMAR LEDs is investigated in this paper. Both theoretical and experimental results show the optical output power and quantum efficiency scale with the number of cascaded active regions. Temperature distribution image measured by scanning thermal microscope is demonstrated that the two active regions emit light simultaneously. The maximum on-axis luminous intensity of 5 cd of TRMAR LEDs with two active regions was obtained with 15° angle cap.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; luminescence; 15° angle cap; AlGaInP; TRMAR LEDs; high-brightness AlGalnP tunnel-regenerated multiactive-region LEDs; on-axis luminous intensity; optical output power; quantum efficiency; scanning thermal microscope; temperature distribution image; Absorption; Atomic force microscopy; Atomic measurements; Light emitting diodes; Optical materials; Optical saturation; Quantum mechanics; Temperature distribution; Temperature measurement; Tunneling;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278166
