High-brightness AlGalnP tunnel-regenerated multi-active-region LEDs

Author

Shen, Guang-Di ; Guo, Xia ; Chen, Jian-Xi ; Wang, Guo-Hong ; Du, Jin-Yu ; De-Shu Zuo ; Wang, Xue-Zhong ; Gao, Guo ; Ji, Yuan ; Balk, Ludwig J. ; Heiderhoff, Ralph ; Lee, Teck Hock

Author_Institution

Inst. of Electron. & Inf. Eng., Beijing Univ. of Technol., China

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

66

Lastpage

69

Abstract

Scalability of TRMAR LEDs is investigated in this paper. Both theoretical and experimental results show the optical output power and quantum efficiency scale with the number of cascaded active regions. Temperature distribution image measured by scanning thermal microscope is demonstrated that the two active regions emit light simultaneously. The maximum on-axis luminous intensity of 5 cd of TRMAR LEDs with two active regions was obtained with 15° angle cap.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; luminescence; 15° angle cap; AlGaInP; TRMAR LEDs; high-brightness AlGalnP tunnel-regenerated multiactive-region LEDs; on-axis luminous intensity; optical output power; quantum efficiency; scanning thermal microscope; temperature distribution image; Absorption; Atomic force microscopy; Atomic measurements; Light emitting diodes; Optical materials; Optical saturation; Quantum mechanics; Temperature distribution; Temperature measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278166

Filename

1278166