Title :
Defects in III nitrides
Author_Institution :
Dept. of Phys., Xiamen Univ., China
Abstract :
Defects were investigated in undoped GaN and AlGaN epilayers grown on Al2O3 substrates by metal organic vapor phase epitaxy. Threading dislocations (TDs) and horizontal dislocations (HDs) in GaN were imaged and classified into different types. Precipitates and their punching out dislocations were recognized in undoped AlGaN. Defects at AlGaN/GaN interface are analyzed to result from compressive stress.
Keywords :
III-V semiconductors; aluminium compounds; dislocations; gallium compounds; precipitation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Al2O3; Al2O3 substrates; AlGaN-GaN; AlGaN/GaN interface; III nitrides; compressive stress; defects; horizontal dislocations; metal organic vapor phase epitaxy; precipitates; punching out dislocations; threading dislocations; undoped AlGaN epilayers; undoped GaN epilayers; Aluminum gallium nitride; Gallium nitride; Impurities; Punching; Stress; Surface morphology;
Conference_Titel :
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN :
0-7803-7887-3
DOI :
10.1109/COS.2003.1278169
