DocumentCode
2696725
Title
Defects in III nitrides
Author
Kang, Junyong
Author_Institution
Dept. of Phys., Xiamen Univ., China
fYear
2003
fDate
12-14 Sept. 2003
Firstpage
78
Lastpage
81
Abstract
Defects were investigated in undoped GaN and AlGaN epilayers grown on Al2O3 substrates by metal organic vapor phase epitaxy. Threading dislocations (TDs) and horizontal dislocations (HDs) in GaN were imaged and classified into different types. Precipitates and their punching out dislocations were recognized in undoped AlGaN. Defects at AlGaN/GaN interface are analyzed to result from compressive stress.
Keywords
III-V semiconductors; aluminium compounds; dislocations; gallium compounds; precipitation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Al2O3; Al2O3 substrates; AlGaN-GaN; AlGaN/GaN interface; III nitrides; compressive stress; defects; horizontal dislocations; metal organic vapor phase epitaxy; precipitates; punching out dislocations; threading dislocations; undoped AlGaN epilayers; undoped GaN epilayers; Aluminum gallium nitride; Gallium nitride; Impurities; Punching; Stress; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics, Proceedings of the Sixth Chinese Symposium
Print_ISBN
0-7803-7887-3
Type
conf
DOI
10.1109/COS.2003.1278169
Filename
1278169
Link To Document