DocumentCode :
2696783
Title :
Dependence of the negative bias temperature instability on the gate oxide thickness
Author :
Pobegen, Gregor ; Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor
Author_Institution :
Kompetenzzentrum fur Automobil- und Industrieelektron. (KAI) GmbH, Villach, Austria
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
1073
Lastpage :
1077
Abstract :
The exact location and type of defects created under negative bias temperature (NBT) stress in pMOS field effect transistors is still a highly debated topic. We present a detailed study on equivalent devices with different oxide thicknesses (5 to 30 nm) where we show experimentally that the basic mechanisms behind the NBT instability are the same in thin and thick oxide technologies. In particular, voltage driven degradation like impact ionization or anode hole injection are not the driving forces for the larger degradation of thick oxide devices. Finally, we show that defects created under NBT stress are not solely located at the interface but extend a few nanometers into the oxide.
Keywords :
MOSFET; semiconductor device reliability; NBT instability; NBT stress; anode hole injection; gate oxide thickness; impact ionization; negative bias temperature instability dependence; pMOS field effect transistors; thick oxide technology; thin oxide technology; voltage driven degradation; Anodes; Charge carrier processes; Degradation; Impact ionization; Negative bias temperature instability; Niobium compounds; Photonic band gap; Stress; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488670
Filename :
5488670
Link To Document :
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