DocumentCode
2696891
Title
Impact of metal electrodes on the figure of merit (kt 2·Q) and spurious modes of contour mode AlN resonators
Author
Segovia-Fernandez, Jeronimo ; Nai-Kuei Kuo ; Piazza, Gianluca
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
299
Lastpage
302
Abstract
This paper presents an experimental study on the impact of the metal electrodes on the level of the first spurious mode, electromechanical coupling (kt2) and quality factor (Q) of laterally vibrating AlN contour mode resonators (CMRs). Pt, Ni, and Al are selected for the fabrication of the device top electrode since they exhibit a broad range of values of Young´s modulus, density and resistivity, which are the most relevant parameters that have an impact on the electromechanical characteristics of the device. The results on the level of the first spurious mode, and kt2 suggest that the acoustic mismatch between electrode and nonelectroded regions affect mostly these parameters. The extracted Q (after subtracting the effect of the electrode resistance) exhibits a trend in line with the theory of interfacial dissipation.
Keywords
Young´s modulus; acoustic resonators; aluminium; aluminium compounds; elastic waves; electrical resistivity; electrodes; nickel; platinum; vibrations; Al; Al device top electrode; AlN; Ni; Ni device top electrode; Pt; Pt device top electrode; Young modulus; contour mode AlN resonators; contour mode resonators; density; device electromechanical characteristics; electromechanical coupling; first spurious mode; interfacial dissipation; laterally vibrating AlN CMR; metal electrode effects; quality factor; resistivity; resonator figure of merit; resonator spurious modes; Acoustics; Admittance; Electrodes; III-V semiconductor materials; Nickel; Resonant frequency; AlN contour mode resonator; electromechanical coupling; metal electrodes; quality factor; spurious modes;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location
Dresden
ISSN
1948-5719
Print_ISBN
978-1-4673-4561-3
Type
conf
DOI
10.1109/ULTSYM.2012.0073
Filename
6562532
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