Title :
Thermal neutron soft error rate for SRAMS in the 90NM–45NM technology range
Author :
Wen, ShiJie ; Wong, Richard ; Romain, Michael ; Tam, Nelson
Author_Institution :
Cisco Syst. Inc., San Jose, CA, USA
Abstract :
The thermal neutron soft error rate (SER) was measured systematically on SRAM cells in the technology range of 90 nm to 45 nm. We report here a substantial SER sensitivity with neutron energies below 0.4 eV for many SRAM cells.
Keywords :
SRAM chips; integrated circuit reliability; thermal analysis; SER sensitivity; SRAM cell; size 90 nm to 45 nm; thermal neutron soft error rate; Contamination; Cosmic rays; Error analysis; Inductors; Neutrons; Particle beams; Pollution measurement; Radiography; Random access memory; Testing; SRAM; Thermal neutron; soft error rate;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488681
