• DocumentCode
    2696962
  • Title

    Thermal neutron soft error rate for SRAMS in the 90NM–45NM technology range

  • Author

    Wen, ShiJie ; Wong, Richard ; Romain, Michael ; Tam, Nelson

  • Author_Institution
    Cisco Syst. Inc., San Jose, CA, USA
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    1036
  • Lastpage
    1039
  • Abstract
    The thermal neutron soft error rate (SER) was measured systematically on SRAM cells in the technology range of 90 nm to 45 nm. We report here a substantial SER sensitivity with neutron energies below 0.4 eV for many SRAM cells.
  • Keywords
    SRAM chips; integrated circuit reliability; thermal analysis; SER sensitivity; SRAM cell; size 90 nm to 45 nm; thermal neutron soft error rate; Contamination; Cosmic rays; Error analysis; Inductors; Neutrons; Particle beams; Pollution measurement; Radiography; Random access memory; Testing; SRAM; Thermal neutron; soft error rate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488681
  • Filename
    5488681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2696962