Title :
Soft errors from neutron and proton-induced multiple-node events
Author :
Cannon, Ethan H.
Author_Institution :
Boeing Co., Seattle, WA, USA
Abstract :
We present geometric models to calculate the rate of multiple node events that can defeat soft error mitigation based on spatial redundancy. One aspect of our model determines the probability of an ion crossing two nodes, while the second part considers two different daughter particles from a neutron or proton collision affecting two nodes.
Keywords :
SRAM chips; cosmic ray neutrons; cosmic ray protons; integrated circuit reliability; redundancy; SRAM cells; cosmic ray neutrons; geometric models; ion crossing probability; neutron-induced multiple-node event rate; proton-induced multiple-node event rate; soft error mitigation; spatial redundancy; CMOS technology; Collision mitigation; Error correction codes; Flip-flops; Joining processes; Neutrons; Protons; Random access memory; Redundancy; Solid modeling; cosmic ray neutrons; protons; single event upsets; soft errors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488682
