Transmission-line characteristics of on-chip interconnects on multilayer silicon structures with thin-metallic ground substrate

This paper studies the transmission-line characteristics of interconnects in a typical metal-insulator-semiconductor (MIS) structure with a thin metallic ground substrate. The characteristic impedance, extracted resistance, inductance, capacitance, and conductance (RLCG) are simulated. The results demonstrated that the frequency-dependent characteristics of interconnects have changed remarkably with the existence of this ground substrate. Furthermore, this substrate significantly increases the series resistance and decreases the inductance, while almost unaffects the shunt inductance and conductance