Title :
Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio
Author :
Futase, Takuya ; Kamino, Takeshi ; Hashikawa, Naoto ; Inaba, Yutaka ; Fujiwara, Tetsuo ; Yamamoto, Hirohiko ; Tanimoto, Hisanori
Author_Institution :
Wafer Process Manuf. Technol. Dept. 2, Renesas Electron. Corp., Ibaraki, China
Abstract :
We applied partial conversion as initial silicidation to control the morphologies of Ni-Pt silicide, viz., the thickness, crystal grain, and Pt concentration of the Ni-Pt silicide. This partial conversion kept the thickness of Ni-Pt silicide constant regardless of the device pattern, i.e., by controlling silicidation with thermal diffusion. The key to partially converting Ni-Pt silicide was leaving a thick Ni-Pt alloy on the silicide, viz., a low metal-consumption ratio, at the narrow active line. This process made the crystal grain finer and enriched the Pt of Ni-Pt silicide, thereby suppressing the increase in resistivity in Ni-Pt silicide.
Keywords :
crystal morphology; electrical resistivity; grain size; metallisation; nickel alloys; platinum alloys; thermal diffusion; NiPt-Si; crystal grain; device pattern; fine-morphology silicide formation; logic device; metal consumption ratio; partial conversion; pattern-independent silicide formation; resistivity; thermal diffusion; Annealing; Chemicals; Cleaning; Logic devices; Silicidation; Silicides; Silicon; Sputter etching; Sputtering; Tin alloys; Ni-Pt; crystal size; diffusion; metal-consumption ratio; partial conversion; rapid thermal annealing; resistivity; silicide;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488691