Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio

We applied partial conversion as initial silicidation to control the morphologies of Ni-Pt silicide, viz., the thickness, crystal grain, and Pt concentration of the Ni-Pt silicide. This partial conversion kept the thickness of Ni-Pt silicide constant regardless of the device pattern, i.e., by controlling silicidation with thermal diffusion. The key to partially converting Ni-Pt silicide was leaving a thick Ni-Pt alloy on the silicide, viz., a low metal-consumption ratio, at the narrow active line. This process made the crystal grain finer and enriched the Pt of Ni-Pt silicide, thereby suppressing the increase in resistivity in Ni-Pt silicide.