NAND Flash reliability degradation induced by HCI in boosted channel potential

Author

Park, Milim ; Park, Sukkwang ; Cho, Seokwon ; Lee, Dong-Kyu ; Jeong, YeonJoo ; Hong, Chonga ; Lee, Ho Seok ; Cho, Myoung Kwan ; Ahn, Kun-Ok ; Koh, Yohwan

Author_Institution

Flash Memory Div., Hynix Semicond. Inc., Cheongju, South Korea

fYear

2010

fDate

2-6 May 2010

Firstpage

975

Lastpage

976

Abstract

In this paper, we present the impact of hot carrier injection (HCI) during programming operation in NAND Flash, and describe how HCI degrades reliability characteristics. In order to understand reliability degradation induced by HCI, we evaluated the reliability characteristics under various stress conditions including the number of disturbance pulses, pulse shapes and temperatures. We have concluded that the programming pulse and boosting bias should be carefully optimized to reduce the impact of HCI.

Keywords

NAND circuits; flash memories; hot carriers; integrated circuit reliability; HCI; NAND flash reliability degradation; boosted channel potential; boosting bias; hot carrier injection; programming pulse; stress conditions; Boosting; Degradation; Electron traps; Flash memory; Hot carriers; Human computer interaction; Pulse shaping methods; Semiconductor device reliability; Stress; Temperature; Channel potential; Hot carrier; NAND Flash;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488692

Filename

5488692