• DocumentCode
    2697295
  • Title

    On the physical interpretation of the impact damage model in TDDB of low-k dielectrics

  • Author

    Lloyd, J.R.

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., SUNY Albany, Albany, NY, USA
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    943
  • Lastpage
    946
  • Abstract
    In one of the new “root-E” models for TDDB, there is a second term in the exponent representing the probability that there is enough energy to create damage that contributes to breakdown failure. This provides an exponential “1/E” character to the extrapolation to use conditions that predicts lifetimes many orders of magnitude longer than the simple root-E extrapolation. It also predicts a threshold voltage for damage independent of the applied field. It is argued here that the requirement for damage may not be the energy, but the momentum transfer to cause physical damage. The consequences are discussed.
  • Keywords
    circuit reliability; low-k dielectric thin films; TDDB; breakdown failure; exponential 1/E character; impact damage model; low-k dielectrics; momentum transfer; root-E extrapolation; root-E models; Acceleration; Copper; Dielectrics; Educational institutions; Electric breakdown; Electrons; Extrapolation; Kinetic theory; Power engineering and energy; Threshold voltage; Impact Damage; Low-k Dielelctrics; TDDB; component;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488700
  • Filename
    5488700