DocumentCode
2697295
Title
On the physical interpretation of the impact damage model in TDDB of low-k dielectrics
Author
Lloyd, J.R.
Author_Institution
Coll. of Nanoscale Sci. & Eng., SUNY Albany, Albany, NY, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
943
Lastpage
946
Abstract
In one of the new “root-E” models for TDDB, there is a second term in the exponent representing the probability that there is enough energy to create damage that contributes to breakdown failure. This provides an exponential “1/E” character to the extrapolation to use conditions that predicts lifetimes many orders of magnitude longer than the simple root-E extrapolation. It also predicts a threshold voltage for damage independent of the applied field. It is argued here that the requirement for damage may not be the energy, but the momentum transfer to cause physical damage. The consequences are discussed.
Keywords
circuit reliability; low-k dielectric thin films; TDDB; breakdown failure; exponential 1/E character; impact damage model; low-k dielectrics; momentum transfer; root-E extrapolation; root-E models; Acceleration; Copper; Dielectrics; Educational institutions; Electric breakdown; Electrons; Extrapolation; Kinetic theory; Power engineering and energy; Threshold voltage; Impact Damage; Low-k Dielelctrics; TDDB; component;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488700
Filename
5488700
Link To Document