Title :
Study of electric field—based lifetime projection method in IMD TDDB
Author :
Zhang, W. ; Zeng, X. ; Liu, W. ; Lim, Y.K. ; Liu, J.F. ; Chua, E.C.
Author_Institution :
GLOBALFOUNDRIES Singapore Ltd., Singapore, Singapore
Abstract :
Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal electric field, is reported. A more realistic lifetime is achieved while predicting whole lot TDDB life-time. Moreover, monitoring leakage current could be adopted into process monitoring strategy.
Keywords :
electric breakdown; integrated circuit interconnections; integrated circuit reliability; leakage currents; low-k dielectric thin films; IMD TDDB; backend interconnect critical dimension variation effect; electric field; electric field-based lifetime projection method; leakage current monitoring; low-k dielectric TDDB time to failure; process monitoring strategy; statistical data; time-dependent dielectric breakdown; trench-to-via spacing; Condition monitoring; Dielectric breakdown; Dielectric materials; Dielectric measurements; Leakage current; Scanning electron microscopy; Shape; Testing; Voltage; Weibull distribution; Schottky emission; equal electric field; low-k; time-dependent dielectric breakdown;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488703
