Study of electric field—based lifetime projection method in IMD TDDB

Author

Zhang, W. ; Zeng, X. ; Liu, W. ; Lim, Y.K. ; Liu, J.F. ; Chua, E.C.

Author_Institution

GLOBALFOUNDRIES Singapore Ltd., Singapore, Singapore

fYear

2010

fDate

2-6 May 2010

Firstpage

938

Lastpage

942

Abstract

Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal electric field, is reported. A more realistic lifetime is achieved while predicting whole lot TDDB life-time. Moreover, monitoring leakage current could be adopted into process monitoring strategy.

Keywords

electric breakdown; integrated circuit interconnections; integrated circuit reliability; leakage currents; low-k dielectric thin films; IMD TDDB; backend interconnect critical dimension variation effect; electric field; electric field-based lifetime projection method; leakage current monitoring; low-k dielectric TDDB time to failure; process monitoring strategy; statistical data; time-dependent dielectric breakdown; trench-to-via spacing; Condition monitoring; Dielectric breakdown; Dielectric materials; Dielectric measurements; Leakage current; Scanning electron microscopy; Shape; Testing; Voltage; Weibull distribution; Schottky emission; equal electric field; low-k; time-dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488703

Filename

5488703