A 1 V CMOS op amp using bulk-driven MOSFETs

Author

Allen, P.W. ; Blalock, B.J. ; Rincon, G.A.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1995

fDate

15-17 Feb. 1995

Firstpage

192

Lastpage

193

Abstract

It is important to develop circuit techniques that permit existing CMOS to implement analog circuits at power supply voltages as low as 1 V. This paper describes some of these techniques and illustrates their application in the design of a CMOS op amp operating from a 1 V power supply. This opamp uses a digital 2-/spl mu/m CMOS having threshold voltages of 0.7 to 0.8 V and demonstrates performance comparable with opamps using higher power supply voltages.

Keywords

CMOS analogue integrated circuits; MOSFET; integrated circuit design; operational amplifiers; 0.7 to 0.8 V; 1 V; 2 micron; CMOS; analog circuits; bulk-driven MOSFETs; circuit techniques; op amps; power supply voltages; threshold voltages; CMOS digital integrated circuits; Fabrication; Lakes; Low voltage; MOSFETs; Power supplies; Solid state circuit design; Solid state circuits; Tail; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-2495-1

Type

conf

DOI

10.1109/ISSCC.1995.535518

Filename

535518

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2697465