Title :
The dependence of poly-crystalline SiC mid-infrared optical properties on deposition conditions
Author :
Provine, J. ; Roper, Christopher ; Schuller, Jon A. ; Brongersma, Mark L. ; Maboudian, Roya ; Howe, Roger T.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
We report on experimental measurements of the optical properties of thin films of poly-crystalline silicon carbide (poly-SiC) deposited by means of low pressure chemical vapor deposition (LPCVD). Measurements in the mid-IR region of the EM spectrum show strong dependence of both far field transmission and surface modes upon the deposition conditions including doping levels, ratio of dichlorosilane (DCS) to 1,3 disilabutane (DSB), and anneals performed on the film. We observe the link between the relative strength of near field phonon polariton resonances, the appearance of a polariton gap, and the achievement of extraordinary optical transmission (EOT).
Keywords :
chemical vapour deposition; infrared spectra; polaritons; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; 1,3 disilabutane; EM spectrum; SiC; deposition conditions; dichlorosilane; doping levels; extraordinary optical transmission; far field transmission; low pressure chemical vapor deposition; mid-IR region; mid-infrared optical properties; nanophotonics; near field phonon polariton resonances; polariton gap; surface modes; thin films; Annealing; Chemical vapor deposition; Distributed control; Doping; Optical films; Performance evaluation; Pressure measurement; Semiconductor thin films; Silicon carbide; Sputtering; Nanophotonics; Plasmonics; Silicon Carbide; mid-Infrared;
Conference_Titel :
Optical MEMs and Nanophotonics, 2008 IEEE/LEOS Internationall Conference on
Conference_Location :
Freiburg
Print_ISBN :
978-1-4244-1917-3
Electronic_ISBN :
978-1-4244-1918-0
DOI :
10.1109/OMEMS.2008.4607889
