Title :
Analysis of the impact of linewidth variation on low-k dielectric breakdown
Author :
Bashir, Muhammad M. ; Milor, Linda
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures have been designed and implemented that vary pattern density and linewidth independently in 45nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated.
Keywords :
integrated circuit interconnections; semiconductor device breakdown; semiconductor device models; comb test structures; layout geometries; linewidth variation; low-k TDDB; low-k time-dependent dielectric breakdown; metal linewidth function; pattern density; semiconductor device models; size 45 nm; Chemical technology; Copper; Dielectric breakdown; Dielectric materials; Electric breakdown; Geometry; Microelectronics; Solid modeling; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488711
