DocumentCode
2697543
Title
Analysis of the impact of linewidth variation on low-k dielectric breakdown
Author
Bashir, Muhammad M. ; Milor, Linda
Author_Institution
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
895
Lastpage
902
Abstract
Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures have been designed and implemented that vary pattern density and linewidth independently in 45nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated.
Keywords
integrated circuit interconnections; semiconductor device breakdown; semiconductor device models; comb test structures; layout geometries; linewidth variation; low-k TDDB; low-k time-dependent dielectric breakdown; metal linewidth function; pattern density; semiconductor device models; size 45 nm; Chemical technology; Copper; Dielectric breakdown; Dielectric materials; Electric breakdown; Geometry; Microelectronics; Solid modeling; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488711
Filename
5488711
Link To Document