Title :
High spatial and temporal resolution thermal imaging for LSI circuits with phase microscopy
Author :
Nakamura, Tomonori ; Iwai, Hidenao ; Yamauchi, Toyohiko ; Terada, Hirotoshi ; Iida, Hithoshi
Author_Institution :
Hamamatsu Photonics K.K., Hamamatsu, Japan
Abstract :
A new thermal imaging method that senses the change in Si index of refraction as a function of temperature to visualize temperature distributions of LSI circuits is described. The resolution is not limited by the heat radiation wavelength but by the sensing light source, which is usually around 1μm. The method further extends the application into the areas that require both high spatial and temporal resolution by utilizing a pulsed light source.
Keywords :
elemental semiconductors; infrared imaging; large scale integration; microscopy; refractive index; silicon; temperature distribution; LSI circuits temperature distribution; Si; heat radiation wavelength; light sensing; phase microscopy; pulsed light source; refraction index; spatial resolution; temporal resolution; thermal imaging method; Circuits; High-resolution imaging; Image resolution; Large scale integration; Light sources; Microscopy; Optical refraction; Spatial resolution; Temperature distribution; Temperature sensors; Heat; NIR; Phase microscopy; Thermal imaging;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488714
