High spatial and temporal resolution thermal imaging for LSI circuits with phase microscopy

Author

Nakamura, Tomonori ; Iwai, Hidenao ; Yamauchi, Toyohiko ; Terada, Hirotoshi ; Iida, Hithoshi

Author_Institution

Hamamatsu Photonics K.K., Hamamatsu, Japan

fYear

2010

fDate

2-6 May 2010

Firstpage

874

Lastpage

878

Abstract

A new thermal imaging method that senses the change in Si index of refraction as a function of temperature to visualize temperature distributions of LSI circuits is described. The resolution is not limited by the heat radiation wavelength but by the sensing light source, which is usually around 1μm. The method further extends the application into the areas that require both high spatial and temporal resolution by utilizing a pulsed light source.

Keywords

elemental semiconductors; infrared imaging; large scale integration; microscopy; refractive index; silicon; temperature distribution; LSI circuits temperature distribution; Si; heat radiation wavelength; light sensing; phase microscopy; pulsed light source; refraction index; spatial resolution; temporal resolution; thermal imaging method; Circuits; High-resolution imaging; Image resolution; Large scale integration; Light sources; Microscopy; Optical refraction; Spatial resolution; Temperature distribution; Temperature sensors; Heat; NIR; Phase microscopy; Thermal imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488714

Filename

5488714