DocumentCode :
269774
Title :
Structural investigation of silicon nanowires with grazing incidence small angle X-ray scattering
Author :
Buttard, Denis ; Schülli, Tobias ; Oehler, F. ; Gentile, P.
Author_Institution :
INAC/SiNaPS-MINATEC, CEA-Grenoble, Grenoble, France
Volume :
8
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
709
Lastpage :
712
Abstract :
Presented is a structural investigation of silicon nanowires, which is conducted with grazing incidence small angle X-ray scattering. The morphology of the wires is analysed following experimental measurements. Three diameters (50, 100 and 200 nm) are investigated in relation to the aspect ratio of the wires (length 25 μm). Periodic fringes because of the weak distribution of the diameter are observed on the experimental images. The asymptotic behaviour of the scattering signal along the qy direction is also analysed and presented.
Keywords :
X-ray scattering; elemental semiconductors; nanowires; silicon; Si; asymptotic behaviour; grazing incidence small angle X-ray scattering; periodic fringes; scattering signal; silicon nanowires; size 100 nm; size 200 nm; size 25 mum; size 50 nm; structural investigation; wire morphology;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2013.0405
Filename :
6651479
Link To Document :
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