Title :
Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications
Author :
Chou, Y.C. ; Leung, D.L. ; Biedenbender, M. ; Buttari, D. ; Eng, D.C. ; Tsai, R.S. ; Lin, C.H. ; Lee, L.S. ; Mei, X.B. ; Wojtowicz, M. ; Barsky, M.E. ; Lai, R. ; Oki, A.K. ; Block, T.R.
Author_Institution :
Microelectron. Processes & Products Center, Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at Tambient of 280°C projects the median-time-to-failure exceeding 1×106 hours at Tchannel of 125°C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.
Keywords :
MMIC; Schottky barriers; high electron mobility transistors; indium compounds; microwave field effect transistors; platinum; semiconductor device reliability; InP; Pt; Pt-sunken gate InP HEMT MMIC degradation; Schottky barrier channel; elevated temperature life testing; progressive Schottky junction reaction; reliability performance; size 0.1 nm; size 4 inch; temperature 125 degC; temperature 280 degC; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit reliability; MMICs; Space technology; Temperature; mHEMTs; HEMT; InP; MMICs; Pt-sunken gate; Schottky junction degradation; lifetest; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488728
