Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Author

Chou, Y.C. ; Leung, D.L. ; Biedenbender, M. ; Buttari, D. ; Eng, D.C. ; Tsai, R.S. ; Lin, C.H. ; Lee, L.S. ; Mei, X.B. ; Wojtowicz, M. ; Barsky, M.E. ; Lai, R. ; Oki, A.K. ; Block, T.R.

Author_Institution

Microelectron. Processes & Products Center, Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2010

fDate

2-6 May 2010

Firstpage

807

Lastpage

812

Abstract

Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T_ambient of 280°C projects the median-time-to-failure exceeding 1×10⁶ hours at T_channel of 125°C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

Keywords

MMIC; Schottky barriers; high electron mobility transistors; indium compounds; microwave field effect transistors; platinum; semiconductor device reliability; InP; Pt; Pt-sunken gate InP HEMT MMIC degradation; Schottky barrier channel; elevated temperature life testing; progressive Schottky junction reaction; reliability performance; size 0.1 nm; size 4 inch; temperature 125 degC; temperature 280 degC; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit reliability; MMICs; Space technology; Temperature; mHEMTs; HEMT; InP; MMICs; Pt-sunken gate; Schottky junction degradation; lifetest; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488728

Filename

5488728