Title :
Electrical stress induced degradation in InAs - AlSb HEMTS
Author :
DasGupta, S. ; Reed, R.A. ; Schrimpf, R.D. ; Fleetwoo, D.M. ; Shen, X. ; Pantelides, S.T. ; Bergman, J. ; Brar, B.
Author_Institution :
EECS Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
InAs-AlSb HEMTs stressed with hot electrons may exhibit shifts in the peak transconductance towards more negative gate voltages. The devices are most degradation prone in operating conditions with high vertical gate field. Annealing trends and theoretical calculations indicate the possible role of an oxygen-induced metastable defect.
Keywords :
aluminium compounds; annealing; high electron mobility transistors; indium compounds; semiconductor device reliability; InAs-AlSb; InAs-AlSb HEMT; annealing; electrical stress induced degradation; high vertical gate field; hot electrons; negative gate voltages; oxygen-induced metastable defect; transconductance; Degradation; Effective mass; Electrons; HEMTs; Leakage current; MODFETs; Metastasis; Stress; Temperature; Threshold voltage; DFT; HEMT; degradation; metastable defect;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488729
