Title :
Frequency-dependent charge-pumping: The depth question revisited
Author :
Zhang, F. ; Cheung, K.P. ; Campbell, J.P. ; Sue, J.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between the measurement frequency and the probed depth. The conclusion is that frequency-dependent charge-pumping is not a defect depth-profiling technique.
Keywords :
circuit reliability; dielectric materials; defect depth-profiling technique; frequency-dependent charge-pumping; gate dielectric; measurement frequency; Charge pumps; Current measurement; Dielectric substrates; Electron traps; Frequency conversion; Frequency measurement; Interface states; NIST; Physics; Tunneling; frequency dependent charge pumping;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488731
