Title :
Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications
Author :
Pellish, Jonathan A. ; LaBel, Kenneth A.
Author_Institution :
Flight Data Syst. & Radiat. Effects Branch, NASA, Greenbelt, MD, USA
Abstract :
Inclusion of commercial technologies in civil spaceflight applications is reality. These technologies enable higher performance, reduce power consumption, and ultimately yield better science. However, the benefits do not come without cost, and radiation-induced soft errors in advanced, sub-90 nm CMOS technologies present new challenges. These challenges include sensitivity to proton direct ionization, memory technology evaluation, as well as testing and evaluation complexity.
Keywords :
CMOS integrated circuits; avionics; integrated circuit reliability; CMOS technologies; civil spaceflight applications; evaluation complexity; memory technology evaluation; power consumption; proton direct ionization; radiation-induced soft errors; size 90 nm; soft error evaluation; space applications; Aerospace electronics; CMOS technology; Failure analysis; Ionization; NASA; Protons; Radiation effects; Risk analysis; Space technology; Space vehicles; CMOS; heavy ion; memory; proton; soft errors; space environment;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488737
