Reset current distributions in phase change memories

In this work a new analytical transport model for the readout region of amorphous GST is proposed. The model is employed to assess, through Monte Carlo (MC) simulations, the sources of variability responsible for the width and shape of the readout current distributions of reset bits. The correlation between transport mechanisms and the statistical spread is highlighted, also considering the reset pulses dependence. Furthermore, the temperature effect on the reset bits is addressed. The statistical characterization results are discussed within the framework of the proposed model.