Title : 
Effective thermal characteristics to suppress joule heating impacts on electromigration in Cu/low-k interconnects
         
        
            Author : 
Yokogawa, S. ; Tsuchiya, H. ; Kakuhara, Y.
         
        
            Author_Institution : 
Adv. Device Dev. Div., NEC Electron. Corp., Sagamihara, Japan
         
        
        
        
        
        
            Abstract : 
We investigated the thermal characteristics of Cu/low-k interconnects to suppress the impact of Joule heating (JH) on electromigration. The thermal time constants in multilayered Cu/low-k interconnects were experimentally investigated for the first time on the basis of the transient thermal response. Furthermore, we analyzed the use of direct radiation through stacked contact/via to suppress the temperature increase from JH. The impact of JH on the critical product of the current density and the line length was also investigated.
         
        
            Keywords : 
copper; electromigration; integrated circuit interconnections; thermal analysis; transient response; Joule heating impact; current density; direct radiation; electromigration; line length; multilayered low-k interconnects; thermal characteristics; thermal time constants; transient thermal response; Acceleration; Annealing; Current density; Electrical resistance measurement; Electromigration; Grain boundaries; Heating; Integrated circuit interconnections; Temperature; Thermal conductivity; Critical product; Electromigration; Joule heating; Thermal conduction; Transient thermal response;
         
        
        
        
            Conference_Titel : 
Reliability Physics Symposium (IRPS), 2010 IEEE International
         
        
            Conference_Location : 
Anaheim, CA
         
        
        
            Print_ISBN : 
978-1-4244-5430-3
         
        
        
            DOI : 
10.1109/IRPS.2010.5488745